Raman scattering study of type II GaInAsSb/InAs heterostructures
Identifieur interne : 000793 ( Russie/Analysis ); précédent : 000792; suivant : 000794Raman scattering study of type II GaInAsSb/InAs heterostructures
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Abstract
Ga1-xInxAsySb1-y quaternary solid solutions lattice-matched to the InAs (001) substrate with composition in the range 0.06 ≤ x ≤ 0.22 were grown by liquid phase epitaxy. Two peaks are observed in their Raman spectra over this composition range. The assignment of the observed modes to GaAs-like and (GaSb+InAs)-like mixture modes is discussed. The modified REI model developed by JAW et al. seems to describe the observed behaviour reasonably. Possibility of determination of the alloy composition from Raman spectra is considered.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Raman scattering study of type II GaInAsSb/InAs heterostructures</title><author><name sortKey="Vorlicek, V" uniqKey="Vorlicek V">V. Vorlicek</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physics, Academy of Sciences of the Czech Republic</s1><s2>Praha</s2><s3>CZE</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>République tchèque</country><wicri:noRegion>Praha</wicri:noRegion></affiliation></author><author><name sortKey="Moiseev, K D" uniqKey="Moiseev K">K. D. Moiseev</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>A. F. loffe Physicotechnical Institute, Russian Academy of Sciences</s1><s2>St. Petersburg</s2><s3>RUS</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Mikhailova, M P" uniqKey="Mikhailova M">M. P. Mikhailova</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>A. F. loffe Physicotechnical Institute, Russian Academy of Sciences</s1><s2>St. Petersburg</s2><s3>RUS</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Yakovlev, Yu P" uniqKey="Yakovlev Y">Yu. P. Yakovlev</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>A. F. loffe Physicotechnical Institute, Russian Academy of Sciences</s1><s2>St. Petersburg</s2><s3>RUS</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Hulicius, E" uniqKey="Hulicius E">E. Hulicius</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physics, Academy of Sciences of the Czech Republic</s1><s2>Praha</s2><s3>CZE</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>République tchèque</country><wicri:noRegion>Praha</wicri:noRegion></affiliation></author><author><name sortKey="Simecek, T" uniqKey="Simecek T">T. Simecek</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physics, Academy of Sciences of the Czech Republic</s1><s2>Praha</s2><s3>CZE</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>République tchèque</country><wicri:noRegion>Praha</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0191786</idno><date when="2002">2002</date><idno type="stanalyst">PASCAL 02-0191786 INIST</idno><idno type="RBID">Pascal:02-0191786</idno><idno type="wicri:Area/Main/Corpus">00F812</idno><idno type="wicri:Area/Main/Repository">00EB47</idno><idno type="wicri:Area/Russie/Extraction">000793</idno></publicationStmt><seriesStmt><idno type="ISSN">0232-1300</idno><title level="j" type="abbreviated">Cryst. res. technol. : (1979)</title><title level="j" type="main">Crystal research and technology : (1979)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compounds</term><term>Composition effect</term><term>Dielectric function</term><term>Experimental study</term><term>Gallium Antimonides arsenides</term><term>Heterostructures</term><term>Indium Antimonides arsenides</term><term>Indium arsenides</term><term>Phonon mode</term><term>Quaternary compounds</term><term>Raman spectra</term><term>Semiconductor materials</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Spectre Raman</term><term>Effet composition</term><term>Mode phonon</term><term>Fonction diélectrique</term><term>Hétérostructure</term><term>Semiconducteur</term><term>Indium arséniure</term><term>Gallium Arsénioantimoniure</term><term>Indium Arsénioantimoniure</term><term>Composé quaternaire</term><term>Composé binaire</term><term>Etude expérimentale</term><term>Ga1-xInxAsySb1-y</term><term>As Ga In Sb</term><term>6322</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Ga<sub>1-x</sub>In<sub>x</sub>As<sub>y</sub>Sb<sub>1-y</sub> quaternary solid solutions lattice-matched to the InAs (001) substrate with composition in the range 0.06 ≤ x ≤ 0.22 were grown by liquid phase epitaxy. 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